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BFR360T
NPN Silicon RF Transistor Preliminary data Low voltage/ low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm Low noise figure: 1.0 dB at 1.8 GHz

3
2 1
VPS05996
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFR360T
Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter Junction - soldering point2) TS 81C
Marking FBs
Pin Configuration 1=B 2=E 3=C
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Symbol RthJS Value 6 15 15 2 35 4 210 150 -65 ... 150 -65 ... 150 Value 325
Package SC75
Unit V
mA mW C
1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance
thJA
1
Unit K/W
Jun-16-2003
BFR360T
Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 15 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 15 mA, VCE = 3 V hFE 60 130 200 IEBO 1 A ICBO 100 nA ICES 10 A V(BR)CEO 6 9 V Symbol min. Values typ. max. Unit
2
Jun-16-2003
BFR360T
Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT IC = 15 mA, VCE = 3 V, f = 1 GHz Collector-base capacitance VCB = 5 V, f = 1 MHz, emitter grounded Collector emitter capacitance VCE = 5 V, f = 1 MHz, base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, collector grounded Noise figure IC = 3 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Power gain, maximum available1) IC = 15 mA, VCE = 3 V, ZS = ZSopt , ZL = ZLopt , f = 1.8 GHz IC = 15 mA, VCE = 3 V, ZS = ZSopt , ZL = ZLopt , f = 3 GHz Transducer gain IC = 15 mA, VCE = 3 V, ZS = ZL = 50 , f = 1.8 GHz IC = 15 mA, VCE = 3 V, ZS = ZL = 50 , f = 3 GHz Third order intercept point at output 2) VCE = 3 V, IC = 15 mA, f = 1.8 GHz, ZS = ZL = 50 1dB Compression point at output IC = 15 mA, VCE = 3 V, ZS = ZL = 50 , f = 1.8 GHz
1G 1/2 ma = |S21e / S12e | (k-(k-1) ) 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1 MHz to 6 GHz
Unit
10 -
14 0.34 0.2 0.4 1
0.5 -
GHz pF
Ccb Cce Ceb Fmin
dB
Gma |S21e|2 IP3 12 8 25 dBm 13.5 9.5 dB
P-1dB
-
9
-
3
Jun-16-2003
BFR360T
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transitor Chip Data:
fF ps mA V ns -
deg fF -
V fF V eV K
1
All parameters are ready to use, no scalling is necessary.
Package Equivalent Circuit:
C4 C1 L2 B L3 C
B'
Transistor Chip E'
C'
L1 = L2 = L3 = C1 = C2 = C3 = C4 = C5 = C6 =
0.762 0.706 0.382 62 84 180 7 40 48
nH nH nH fF fF fF fF fF fF
C6
C2
L1
C3
C5
Valid up to 6GHz
E
For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http//www.infineon.com/silicondiscretes
EHA07524
4
Jun-16-2003
m V
IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = AF =
0.0689 20 2.4 60 1.4 7.31 400 9.219 1.336 0.864 1.92 0 0
fA V V -
BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = KF =
147 77.28 6 0.3 0.1 78.2 1.3 0.115 0 0.486 0 0 0.954 1E-14
mA A
NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = NK =
1 150 1 20 74 0.35 0.5 0.198 473 0.129 0.75 1.11 0.5
fA fA A

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